Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures
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چکیده
منابع مشابه
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
Temperature and carrier density-dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically designed GaAs QW comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin r...
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A fully microscopic theory of electron spin relaxation by the D’yakonov-Perel’ type spin-orbit coupling is developed for a semiconductor quantum well in an ambient magnetic field applied perpendicular to the plane of the well. We derive Bloch equations for an electron spin in the well and determine explicit microscopic expressions for the spin relaxation times. The dependencies of the electron ...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2018
ISSN: 0268-1242,1361-6641
DOI: 10.1088/1361-6641/aae354